INFLUENCE OF X-RADIATION ON STRUCTURE OF DNA OF YEASTS C. guilliermondii NP-4
Abstract
Investigation of fluorescence, electrophoretic and melting parameters of DNA of yeasts Candida guilliermondii NP-4 after X-radiation and posradiation repair was carried out. It was shown that under influence of X-radiation the rate of saturation of DNA by ethidium bromide and the melting temperature of yeast DNA was increased, and the melting interval was decreased. After repair period the rate of saturation of DNA by ethidium bromide and the melting temperature of yeast DNA were the highest, and the melting interval was the lowest, and in the electrophoregramms or repaired DNA there were additional low molecular fractions which testify about possible changes in DNA primary and secondary structures under influence of X-radiation and postradiation repair.
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