МАГНЕТРОННОЕ ОСАЖДЕНИЕ ПРОЗРАЧНЫХ ПЛЕНОК AZO ИЗ КОМПОЗИЦИОННЫХ И ОДНОЭЛЕМЕНТНЫХ МИШЕНЕЙ
Аннотация
Для создания прозрачных проводящих тонкопленочных покрытий на основе оксида цинка, легированного оксидом алюминия, (ZnO:Al2O3, AZO) на полимерных (акриловых) подложках были рассмотрены различные способы магнетронного осаждения. В первом методе использовался один магнетрон с композиционной мишенью ZnO:Al2O3. Магнитная конфигурация магнетрона имела возможность внешней регулировки положения магнитов для управления потоком ионов на подложку. Была установлена корреляция между электрическим сопротивлением сформированной пленки AZO и потоком ионов на подложку при осаждении. Однако, минимальное удельное сопротивление покрытий AZO, полученных этим методом, не опускалось ниже значения 300 Ом/□. Было показано, что возможности регулирования процесса осаждения прозрачной пленки AZO значительно расширяются за счет использования двух независимых магнетронов с одноэлементными металлическими мишенями Zn и Al. Был предложен новый метод многостадийного нанесения покрытия, в котором слой ZnO формировался путем распыления металлической мишени Zn в газовой смеси Ar/O2, а легирующий слой осаждался путем распыления металлической мишени Al в атмосфере аргона. Доля легирующей примеси в полученной структуре AZO контролировалась путем изменения отношения продолжительности циклов осаждения слоев ZnO и Al. Такой подход обеспечил гораздо более гибкий контроль состава покрытия. Полученные образцы продемонстрировали высокие функциональные свойства, обладая низкими поверхностным сопротивлением 10 Ом/□ и удельным сопротивлением 3×10⁻6 Ом×м в сочетании с высокой оптической прозрачностью, что подтверждает потенциал этих полупроводниковых покрытий для использования в оптоэлектронных устройствах.
Для цитирования:
Колодко Д.В., Казиев А.В., Агейченков Д.Г., Тумаркин А.В., Харьков М.М., Смирнова К.В., Шутов Д.А. Магнетронное осаждение прозрачных пленок AZO из композиционных и одноэлементных мишеней. Изв. вузов. Химия и хим. технология. 2026. Т. 69. Вып. 6. С. 78-85. DOI: 10.6060/ivkkt.20266906.7088.
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