FABRICATION OF WELL-DEVELOPED SURFACE OF SYNTHETIC DIAMOND SINGLE CRYSTALS FOR INCREASING IN SPECIFIC POWER OF BETAVOLTAIC POWER SUPPLIES ON THEIR BASE

  • Anton V. Golovanov Moscow Institute of Physics and Technology
  • Vitaliy S. Bormashov Technological Institute for Superhard and Novel Carbon Materials
  • Alexander P. Volkov Technological Institute for Superhard and Novel Carbon Materials
  • Sergey A. Tarelkin Moscow Institute of Physics and Technology
  • Sergeiy G. Buga Moscow Institute of Physics and Technology
  • Vladimir D. Blank Technological Institute for Superhard and Novel Carbon Materials
Keywords: synthetic diamond, anisotropic etching, reactive ion etching

Abstract

The process of the reactive ion etching of synthetic monocrystalline diamond with thick aluminum oxide and aluminum nitride protective masks for increasing the surface of diamond was studied. The etching selectivity of aluminum oxide and aluminum nitride were determined. The relief structures in a shape of ribs with more than 2 µm height, 5 µm period and 45° profile slope were fabricated on diamond surface. These structures increase the effective surface area 1.3 times.

References

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Published
2018-07-17
How to Cite
Golovanov, A. V., Bormashov, V. S., Volkov, A. P., Tarelkin, S. A., Buga, S. G., & Blank, V. D. (2018). FABRICATION OF WELL-DEVELOPED SURFACE OF SYNTHETIC DIAMOND SINGLE CRYSTALS FOR INCREASING IN SPECIFIC POWER OF BETAVOLTAIC POWER SUPPLIES ON THEIR BASE. ChemChemTech, 59(9), 86-91. https://doi.org/10.6060/tcct.20165909.6y
Section
CHEMICAL TECHNOLOGY (inorganic and organic substances. Theoretical fundamentals)

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